研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
Hla说(金属线)是可能在半导体或绝缘体上制作的，从而进一步证明电子是沿着电线无电阻导电。
Hla says it should be possible to grow the wires on semiconductors or insulators as well and prove that electrons superconduct along the wires.
Hla说(金属线)是可能在半导体或绝缘体上制作的，从而进一步证明电子是沿着电线无电阻导电。
Hla said (metal wire) is probably produced in the semiconductor or insulator, and thus further evidence of the electronic conductivity along the wires without resistance.
Hla说(金属线)是可能在半导体或绝缘体上制作的，从而进一步证明电子是沿着电线无电阻导电。
Hla said (metal wire) is probably produced in the semiconductor or insulator and thus further evidence of the electronic conductivity along the wires without resistance.
半导体具有不同于导体和绝缘体的特性。
Semiconductors have properties different from those of conductors and insulators.
晶体可以是绝缘体，半导体，或导体。
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
半导体：一类晶体材料，其电导率介于导体和绝缘体之间。
Semiconductor: Class of crystalline solids with electrical conductivity between that of a conductor and an insulator.
在绝对零度时，纯半导体所有电子都紧紧结合在一起，因而显示出绝缘体的性质。
At absolute zero, a pure semiconductor has all of its electrons tightly bound and ACTS as an insulator.
半导体是导体之间，那里的电力可以自由流动，以及绝缘体，其中电子的约束紧密其原子和不自由流动。
A semiconductor is in between a conductor, where electricity can flow freely, and an insulator, where electrons are bound tightly to their atoms and do not flow freely.
静电产生后可以利用导电路径将其释放，在速度上而言以导体最快，半导体次之，绝缘体最慢。
We can use conduct electricity path to discharge static electricity. And speed of discharge, the first is conductor, then is semiconductor, and insulator.
锗是一种半导体材料，其导电系数介于导体与绝缘体之间。
Germanium is a semiconductor material with its conductivity lying between that of conductors and that of insulators.
氧化锌纳米颗粒的导电能力介于导体和绝缘体之间是一种典型的半导体。
ZnO nanoparticle is a typical semiconductor Electric conductivity of which is between that of conductors and that of insulators.
DNA分子的电荷输运实验显示DNA分子呈现出导体、半导体、绝缘体等丰富的电学性质。
The experiments of charge transport in DNA molecular have shown that DNA molecular may be conductor, semiconductor or insulator.
常用金属氧化物大多为半导体或绝缘体，对激光有良好的吸收性能。
Most metal oxides widely used are semiconductors or insulators, and have good absorbing properties to laser.
这种前驱物在920k以下为绝缘体，在920k由绝缘体转变为非晶半导体。
This amorphous B_C_N behaves as an insulator below 920k, and transforms into semiconductor above 920k.
所述半导体衬底可以是SOI（绝缘体上硅）结构。
The semiconductor substrate may be an SOI (silicon on insulator) structure.
一种电荷耦合器件，其中在器件的半导体-绝缘体界面处建立电势井。电荷沿着该界面传输。
A charge-coupled device in which the potential Wells are created at the semiconductor insulator interface and the charge is transferred along that interface.
实际上并没有一个明显的界限将半导体和绝缘体分开。
There is no sharp line separating conductors from insulators .
在绝对零度时，绝对半导体所有的电子都紧紧结合在一起，因而显示出绝缘体的性质。
At absolute zero, a pure semiconductor has all of its electrons tightly bound and ACTS as an insulator.
该半导体组件还包括涂覆金属(36)，该涂覆金属位于绝缘体的至少一部分之上并互相连接背面接触垫。
The semiconductor assembly further includes metallization (36) situated over at least a portion of the insulation and interconnecting the backside contact pads.
结果显示，随着结构导向剂的变化，化合物呈现从导体-半导体-绝缘体的转变。
A significant feature of the result is their transformation of conductor-semiconductor-insulator as tuned by different SDAs.
实际上并没有一个明显的界限将半导体和绝缘体分开。
There is no sharp line separating conductors from insulators.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
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