微芯片制作采用了硅、硅氧化物以及金等生物相容性较好的材料。
The micro chip was fabricated with silicon, silicon dioxide and gold.
以硅、二氧化硅为原料，采用水热沉积法制备了球状纳米硅氧化物。
Spherical nanoscale silicon oxide have been prepared by hydrothermal deposition process using silicon and silica as the starting materials.
通过对XPS图的分析得到硅氧的原子比大约是1：1，这个结果表明对薄膜进行退火后氧化硅薄膜是富硅氧化物。
Analysis by XPS graph obtained silicon atom ratio of oxygen is about 1:1, the results showed that the films were annealed silicon oxide film is rich silicon oxide.
研究生迈克尔·塞格纳托维茨先是将一些钾铌氧化物堆积到硅表面，接着用光学显微镜拍摄了这幅图片，看上去像一个遥远的星系一般。
After depositing some potassium niobium oxide onto a silicon surface, graduate student Michael Sygnatowicz used an optical microscope to take this photograph, resembling a distant galaxy.
本文对这些氧化物薄膜硅衬底的相互作用也进行了讨论。
The interaction between oxide films and silicon substrates is discussed.
从热力学分析了用铝、钙、硅、钛及铁铬铝中的铝还原稀土氧化物成稀土金属进入合金的可能性。
The possibility of reduction of rare-earth oxides to metals by aluminum in Fe-Cr-Al alloys as well as by aluminum, calcium, silicon and titanium has been studied from the view point of thermodynamics.
结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
硅镁氧化物包覆层采用溶胶-凝胶法制备，由正硅酸乙脂水解和缩聚得到。
The coating layer of silica and magnesium oxides was prepared by sol-gel method.
介绍了纳米硅基氧化物的特性及其在涂料中的分散、改性作用。
Characteristics of nano silica, dispersion, and modification thereof in coatings are introduced.
所述多晶硅瓦片的用意是减少场效氧化物在紧密间隔的有源区之间的侵蚀。
The intention of the polysilicon tiles is to reduce erosion of the field oxide between closely spaced active regions.
另外，用溶胶凝胶法获得钛离子在硅氧体中高度分散的混合氧化物催化材料，也是一个新的研究热点。
Prepare the TiO2-SiO2 mixed oxide with highly dispersed titanium species through sol-gel process is also a hot research area.
因此随之而来的问题是：由于在形成热氧化物的时候，由于硅和氧的不完全反应，在硅和二氧化硅的界面会生成一氧化硅的气态不稳定物质。
So the problem is coming that SiO gaseous unstable matter is made in the interface of silicon and silicon dioxide due to silicon and oxygen incomplete reaction when making thermal oxide layer.
本发明提供的硅和氧化物场效应管不仅把钙钛矿氧化物和硅电子学结合起来，具有功能特性。
The silicon and oxide field effect transistor provided by the invention not only combines perovskite oxides and silicon electronics, but also has the functional characteristics.
利用一化学机械研磨制程，移除该氧化 物层的部分区域，以使该填满沟槽的氧化物层与该第一多晶硅层大体上齐平。
Through a CMP process, portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
栅极多晶硅（14.3）和所述多晶硅瓦 片（14.1和14.2）的角落处是氧化物间隔物（60.1-60.6）。
At the corner of the gate polysilicon (14.3) and the polysilicon tiles (14.1 and 14.2) are oxide spacers (60.1-60.6).
膏组合物是用于在硅半导体基板(1)上形成电极(8)用的膏组合物，含有铝粉末、有机质媒介物和氢氧化物。
The paste composition is a paste composition for forming an electrode (8) on a silicon semiconductor substrate (1) and comprises an aluminum powder, an organic vehicle, and a hydroxide.
以及沉积于所述栅极氧化物之上的栅极多晶硅。
碳化硅是由碳和硅以共价键为主结合而成的化合物，属非氧化物材料。
SiC is combined by and Si by covalent bond, Which is a kind of non-oxide materials.
体现了其原有的核心是一个金属氧化物硅三明治的首字母缩写马鞍山负责，如MOSFET和MOS技术。
The heart of its original embodiment was a metal-oxide-silicon sandwich , with initial letters responsible for the acronym MOS , as in MOSFET and MOS technology.
由1，3，5-三（甲基三氟丙基）环三硅氧烷的阴离子本体开环缩聚合成了氟硅生胶，并对生胶进行过氧化物交联。
Poly(methyl(trifluoropropyl) siloxane)(PMTFPS) was prepared by bulk ring-opening polymerization of 1,3,5-trimethyl-trifluoropropyl cyclotrisiloxane, and crosslinked by peroxide compound.
介绍了金属氢氧化物、磷系阻燃剂、膨胀型阻燃剂、有机硅系阻燃剂和纳米阻燃剂等无卤阻燃剂在聚丙烯中的应用情况。
The properties of various kinds of phosphorus flame retardant of classified of inorganic phosphate and organic phosphate are summarized in this article.
介绍了金属氢氧化物、磷系阻燃剂、膨胀型阻燃剂、有机硅系阻燃剂和纳米阻燃剂等无卤阻燃剂在聚丙烯中的应用情况。
The properties of various kinds of phosphorus flame retardant of classified of inorganic phosphate and organic phosphate are summarized in this article.
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