讨论了常见的组装缺陷和电迁移现象产生的原因及其预防措施。
Discuss some assembly defects and migration for causes and precaution.
金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。
Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.
针对这个问题，本文首先介绍了IR压降和电迁移现象的产生原因及其影响因素。
Therefore, the reasons and the influencing factors of IR-drop and electromigration are discussed firstly.
覆晶封装中电迁移效应导致之铜溶解现象本論文报导覆晶封装之焊点中电迁移所引起之铜垫层快速溶解现象。
Electromigration induced Cu dissolution in flip chip Packages The phenomenon of Cu dissolution induced by electromigration at flip chip solder joints is reported.
覆晶封装中电迁移效应导致之铜溶解现象本論文报导覆晶封装之焊点中电迁移所引起之铜垫层快速溶解现象。
Electromigration induced Cu dissolution in flip chip Packages The phenomenon of Cu dissolution induced by electromigration at flip chip solder joints is reported.
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