激励电源电压与频率、电介质材料、DBD结构、媒介气体等均会对电荷沉积效应产生较大影响。
Some factors can affect greatly the effect of chargesdeposited in layer, such as applied voltage and frequency, dielectric material, DBD configuration and media gas, etc.
结果表明，层析得到的电源强度与头表的脑电数据相比，能更好地反映注意导致的P 1、N1相对增强效应，其中尤以N1的增强比较明显。
The results show that compared with the scalp surface ERP data, the current source intensity derived from tomography can better reflect the enhanced effect of P1 and N1, especially N1.
本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。
Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.
得到了电源电极短路效应和输出电极短路效应引起的灵敏度几何因子与器件尺寸的关系。
The geometric factor of sensitivity related to device geometry resulting from short-circuit-effect of power supply electrodes and out-put electrodes can be obtained.
供电电源则将14只功率场效应晶体管MOSFET接入电源变压器次级，两绕组的全部组合可构成18个不同扎数的次级。
The power source used 14 power file effect transistor MOSFET in power transformer second order; all the combinations of twist-coil could construct 18 different second orders.
任选地，电源线和信号线之间的耦合适于提供对串扰效应的最大补偿。
Optionally, the couplings between the power lines and the signal lines are adapted to provide a maximal compensation of cross-talk effects.
本项研究针对影响超深亚微米物理设计的主要技术难点信号完整性问题，在提高电源规划质量的同时，分别对串扰效应和天线效应进行了相应的抑制。
As for the SI which is the main problem for VDSM physical design, the design offers a correspondent restraint to crosstalk and antenna while improving power plan.
电源网格上存在着三种主要的物理效应，其中压降效应和地弹反射效应影响信号的完整性，电子迁移效应影响芯片设计的可靠性。
There are three physical effects on the power grid. Among them, IR-Drop effect and ground bounce effect impact the signal integrity while electro-migration impacts the reliability of VLSI design.
只有载体侧FET(场效应晶体管)开关需要电源，载体本身基本上不需要电源。
As we need only electrical power for FET switching on the carrier side, power supply system for carrier is basically not needed.
主要结构有：电磁铁和恒流电源、数字式高斯计(霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The main structure have: Electromagnet and Heng galvanism source, numerical type Gauss account (the effect of Huo er) and ammeter and volt account, have control dish of illuminate the system.
利用所研制的开关式场效应管弧焊电源进行引弧试验和工艺 试验，结果表明，此电源具有良好的引 弧性能和工艺性能，是一种发展前景较远大的电子 弧焊电源。
The satisfactory tests of arc-ignition and good properties of welding process may prove this switched MOSFET arc welding power source to be an electronic power source with broad prospects.
AD5764的电源走线必须尽可能宽，以提供低阻抗路径，并减小电源线路上的突波效应。
The power supply traces of the AD5764 must be as wide as possible to provide low impedance paths and reduce the effects of glitches on the power supply line.
电源开关应用垂直场效应管技术来确保最佳的阻态。
The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
电源开关应用垂直场效应管技术来确保最佳的阻态。
The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
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