通过自制的专用电容器，采用电容测量仪测电容的方法，在物理实验中开设液体电介质的相对介电常数的测量实验。
This article introduces a method to measure the relative dielectric constant of liquid dielectrics in physical experiments, with a special capacitor made by ourself.
它是利用多相介质具有不同的介电常数，通过电容传感器测量获得介电常数分布而获得介质分布的图像。
By using multiphase medium with different permittivity, the image of medium distribution could be obtained through measuring the obtained permittivity by capacitance sensor.
给出了它的有效介电常数，单位长度电容和特性阻抗的解析表达式。
The analytic expressions for its relative effective permittivity, capacitance per unit length and characteristic impedance are given.
由衬底损耗机制，讨论了衬底阻抗、氧化层电容和衬底有效介电常数对滤波性能的影响。
Increasing the substrate resistance and reducing the substrates' oxide thickness and coupled capacitances make a reduction of the substrate loss.
电容式液位测量系统是基于改变介电常数时，电容器的电容量变化的原理来测量液位的。
Capacitive system for liquid level measurement can measure the liquid level according to the principle which capacitance value is changed with the dielectric constant.
电容传感器是基于平板电容模型的一种新型传感器，其电容值取决于介电层厚度和介电常数。
The capacitance of the sensor is depended on the thickness and dielectric behavior of its dielectric layer.
多孔硅表面吸附乙醇分子后，多孔硅膜的导电性和介电常数会发生改变，引起气敏元件的电阻和电容值变化。
When the surface of porous silicon adsorbs gas molecule, the conductivity and dielectric Constance of porous silicon membrane take place to changes.
本发明方法大大的提高了铌酸钠钾体系的介电常数，可满足大容量电容器的商业使用需求。
The method of the invention improves the dielectric coefficient of the potassium sodium niobate system greatly, and is capable of meeting the business usage requirement of large-capacity capacitors.
通过求解电容器的等效电容，进一步导出复合材料有效介电常数的计算公式。
By solving the equivalent capacitance of the capacitor, the formulas of effective permittivity are derived.
通常应用电介质来产生具有高介电常数的嵌入电容器以及具有嵌入电容器的PCB。
The dielectric is usefully applied to produce an embedded capacitor with the high dielectric constant and the PCB provided with the embedded capacitor.
用有限元法分析了标准电容器电场的电位势的分布，得到了孔洞材料的介电常数。
The distribution of electrical potential of standard capacitor is analyzed by finite element method;
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
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