相应地，该晶体管的阈值电压及栅源极电压也可降低。
Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.
硬开关(图26所示)几乎不考虑漏源极电压的最小值。
The hard switching approach (as shown in Fig. 26) doesn't consider the minimum drain-source voltage.
图20描述了漏源极电压主要原理产生的电磁干扰频谱。
The spectra of the main elements of the drain-source voltage can be found in Fig. 20.
把这些原理按时序整合呈现出图16所示的典型漏源极电压。
The superposition of all these elements results in a typical drain-source voltage shown in Fig. 16.
这里有两条理由可以解释800伏特漏源极电压波形的两个差异。
This can be explained by two major differences of the 800v drain-source voltage waveform.
结果表明，随着工件阴极电压、源极电压和气压的增加，等离子体密度增大。
It is shown that the plasma density increases with increasing workpiece voltage, source voltage and gas pressure.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
源-测量单元还可以测量其它的二极管参数，包括正向电压降和击穿电压。
The Source-Measure Unit can also test other diode parameters, including forward voltage drop and breakdown voltage.
降低漏源极直流母线电压影响干扰信号按傅立叶展开式的全部频带。
The decrease of the drain-source voltage or bus voltage affects the entire spectrum evenly according to Fourier theory.
根据电压源的极性，互相并联的两个二极管(D)中的一个用来减小噪声，而另一个二极管则提供放电通路。
Depending on the polarity of the voltage source, one of the two diodes (d) in parallel is used to reduce noise while the other provides a discharge path.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
该电路应用两级差动放大增加电路增益，利用源极跟随器作为电压缓冲器以减少信号电平损失。
It uses tow-stage differential amplifiuers to increasee the circuit gain and uses a source follower as a voltage buffer to decrease signal volt- age losing.
由于采用了一种新型的低损耗无源缓冲电路，开关管和主二极管的电流电压应力较小，并降低了能量损耗，提高了工作效率。
Since the novel low-loss passive snubber circuit is used, the low current and voltage stress, low energy loss and high efficiency properties are achieved.
在很多测试应用中，二极管的电压和发出的光可以利用大小固定的电流源同时测出来。
In many test applications, the voltage and light output of the diode can be measured simultaneously using a fixed source current value.
与此同时，Q3的源电流通过D1流到R4，从而拉动R4的电压，使二极管电压降到低于电源。
At the same instant, Q3 sources current into R4 through D1, thereby pulling the voltage on R4 to a diode drop below the supply voltage.
根据电压源的极性，互相并联的两个二极管中的一个用来减小噪声，而另一个二极管则提供放电通路。
Depending on the polarity of the voltage source, one of the two diodes in parallel is used to reduce noise while the other provides a discharge path.
这时串联的电阻器可以小得多，因为其作用只是防止电压源过载以及电容器短路时损坏二极管。
The series resistor can be much smaller since it is only needed to prevent overload of the voltage source and damage to the diode if the capacitor becomes short-circuited.
这时串联的电阻器可以小得多，因为其作用只是防止电压源过载以及电容器短路时损坏二极管。
The series resistor can be much smaller since it is only needed to prevent overload of the voltage source and damage to the diode if the capacitor becomes short-circuited.
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