泄漏电流是由测量电路和附近的电压源之间的寄生电阻通路产生的。
Leakage currents are generated by stray resistance paths between the measurement circuit and nearby voltage sources.
测量高电阻时两个最常见的误差来源是静电干扰和泄漏电流。
The two most common error sources when measuring high resistance are electrostatic interference and leakage current.
泄漏电流将在此回路中流动，但是不影响测量。
A leakage current will flow around this loop, but won't affect the measurement.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
泄漏电流随时间呈指数衰减，所以通常需要在一个已知的时间期间内施加电压(浸润时间)，然后再测量电流。
The leakage current will decay exponentially with time, so it's usually necessary to apply the voltage for a known period (the "soak" time) before measuring the current.
其中有些测试工作包括各种泄漏电流的测量。
Some of these tests include a variety of leakage current measurements.
适用于测量mlcc泄漏电流。
通过测量断路器环氧套管的泄漏电流来表征绝缘特性。
The insulation could be characterized by measuring the leakage current of bushing.
一种用于测量泄漏电流的结构(100)和方法。
本文介绍了绝缘子污染的测量方法，表面电阻测量装置和泄漏电流检测装置，并取得一些结果。
This paper introduces the method of insulation pollution testing, including surface resistance device and Vent current testing device, with correct results.
本文介绍了绝缘子污染的测量方法，表面电阻测量装置和泄漏电流检测装置，并取得一些结果。
This paper introduces the method of insulation pollution testing, including surface resistance device and Vent current testing device, with correct results.
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