采用一种新工艺制作了垂直腔面发射激光器(VCSEL)，即用开环分布孔取代以往的环形沟道作为氧化物限制技术的注入窗口。
A new process method, using open annulus distributed holes in place of ring trench as the lateral oxidation Windows, is reported to fabricate vertical-cavity surface emitting laser (VCSEL).
利用电荷泵方法可以有效而准确地测量出注入电荷沿沟道方向的分布。
The lateral distribution of injected charges can be measured precisely using the charge pumping method.
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。
For double channel implantations with different depths, different contributions of the implanted impurities during oxide diffusion to the surface concentrations are studied in the paper.
分析了反型层的杂质分布、最大沟道电势与注入剂量、氧化层厚度和栅压等之间的关系。
The relations of impurity profile in the inversion layer and the maximum channel potential versus dose, width of SiO_2 and gate bias are analysed.
采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
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