调节带的形成与两条断层的横向生长叠覆及相互作用有关。
The formation of the accommodation zone is related to growth, overlapping and interaction of the two faults.
制作好墙树的框架后，我们开始选择一些横向生长的枝条固定到墙上，这是最困难的一部分。
Having created the espalier frame, we chose some lateral branches to train against the walls. This was the most painful part.
水培条件下能加快植株的横向生长但减慢了纵向生长，提高单果重但降低了座果率。
In the condition of nutrient solution culture, the plant speed up horizontal growth but slow down vertical growth, raise the single fruit weight but reduce the efficiency of bearing fruit.
源自金属催化剂的各柱体的纳米管(42、44)横向生长并且邻接或合并成一个纳米管。
Nanotubes (42, 44) from each column of metallic catalyst are laterally grown and either abut or merge into one nanotube.
主要结合各种基于光 束调制和光刻技术的人工控制超级横向生长方法，讨论了获得大晶粒尺寸优质多晶硅薄膜的途径。
Approaches to enlarging poly-Si film grain size are discussed, with emphasis on existing optics-based and lithography-based artificial controlled super lateral growth(AC-SLG) methods.
本文论述了SOI方法之一——ELO（外延横向覆盖生长）技术的特点和工艺方案。
The characteristics and processing methods of ELO (Epitaxial Lateral Overgrowth), one of SOI technologies, have been described.
横向开口包含颈状部分和用作生长纳米管的受限空间的空腔部分。
The lateral opening includes a neck portion and a cavity portion which is used as a constrained space to grow a nanotube.
这种氧化钨管是由多根平行生长的氧化钨纳米线横向联合而成。
The formation of these WO3 tubes is attributed to the lateral coalescence of tungsten oxide nanowires.
通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
详细研究了金属诱导非晶硅横向晶化时间、温度对晶化生长的影响。
In this paper, the effect of annealing temperature and time on the rate of metal-induced lateral crystallization (m ILC) of amorphous silicon are investigated in detail.
详细研究了金属诱导非晶硅横向晶化时间、温度对晶化生长的影响。
In this paper, the effect of annealing temperature and time on the rate of metal-induced lateral crystallization (m ILC) of amorphous silicon are investigated in detail.
应用推荐