曝光效应这种心理现象指的是人们容易对熟悉的人或事物产生好感。
The mere-exposure effect is a psychological phenomenon by which people tend to develop a preference for things merely because they are familiar with them.
然而这是另外一码事了。所以，除了曝光效应，你照片中的自己是不会辜负你对自己的过高期望。
But that's a story for another day. So, in addition to mere-exposure, those pictures of your own face just aren't living up to your own outsized expectations.
首先，得益于“曝光效应”——已有的心理学研究表明，人们之所以喜欢一样东西，可能只是因为它们更常见。
First, it's a lesson in the power of raw repetition - the "mere exposure effect" identified by psychology studies that suggests we like things more simply by seeing them more often.
各环节紧扣网络销售资源，通过这种循环保持着极高的关注度与曝光率，以极低的代价换取了最大的广告效应。
Each link closely network marketing resources, through the cycle to keep the high attention and exposure, at a low price for the largest advertising effect.
此外还有所谓的“单纯曝光”效应。
驻波是曝光中的寄生效应，是光线垂直入射到不同的平行平面介质层之间，经多次反射并干涉形成的。
Standing wave is parasitic effect of exposure, generated by multi reflection and interference of rays vertically incident upon parallel medium layers.
读出信号强度随着曝光时间的增加也明显地呈现出饱和效应。
The saturation effect is also evident as exposure time is longer.
将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。
By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.
刷新率的变化和黑栅衍射效应将导致衍射效率下降，使得曝光深度误差增加。
The variation of refresh rate and diffraction by opaque lattice will lead to reducing diffraction efficiency and this will increase exposure depth error.
从消极方面讲，曝光会在公众中产生“放大镜”效应和麻木感，或造成社会恐慌，或由于曝光失实导致社会混乱等。
The negative of exposure leads to the effects of magnifier and apathetic sense, or leads to social mob and social panic, or leads to social chaos because of false exposure.
本文的模拟结果不仅能为高能电子束光刻工艺优化曝光条件、降低邻近效应提供理论指导，而且能为进一步的邻近效应的校正提供更精确的数据。
The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.
利用电子束曝光机完成有关邻近效应的实验。
The proximity effect in the E-beam lithography system was verified by experiments.
利用SDS - 3电子束曝光机完成有关邻近效应的试验。
The proximity effect in the SDS-3 E-beam lithography system is verified by experiments.
针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。
The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.
针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。
The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.
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