这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
讨论了基于MOS晶体管亚阈值区特性的CMOS四象限模拟乘法器的设计。
The design technique for a CMOS four quadrant analog multiplier is presented, which is based on the characteristics of the MOSFET subthreshold region.
该工具可以产生用于特定设计的制造掩模，该设计包括具有优化的阈值电压的混合栅极晶体管以符合电路设计标准。
The tool may generate fabrication masks for the given design that include mixed gate transistors with threshold voltages optimized to meet circuit design criteria.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
相应地，该晶体管的阈值电压及栅源极电压也可降低。
Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.
神经mos晶体管是一种具有多输入栅加权信号控制和阈值可调控的高功能度的新型器件。
The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation.
所述像素用于补偿驱动晶体管的阈值电压和第一电源的压降。
A pixel for compensating for the threshold voltage of a drive transistor and the voltage drop of a first power source are provided.
晶体管元件包括预定的阈值电压。
The transistor element comprises a predefined threshold voltage.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
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