在非易失性存储装置中，可以通过将擦除电压施加到位线或共源线来从存储晶体管擦除数据。
In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
行控制电路206连接到字线以选择字线中的一者、施加读取电压、施加编程电压以及施加擦除电压。
The row control circuit 206 is connected to the word lines to select one of the word lines, to apply read voltages, to apply program voltages and to apply an erase voltage.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。
FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.
图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。
FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.
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