尤其是在制备铒掺杂型氧化硅中，获得了低百分比的成簇铒离子。
Especially, in the production of erbium-doped silica, low percentage of clustered erbium ions is achieved.
结果表明，与四方晶格材料不同，空穴型掺杂双层三角晶格反铁磁体积分自旋动力学不具有普适行为。
It is shown that unlike square antiferromagnets, the integrated spin dynamics of the hole doped bilayer triangular lattice does not show particularly universal behaviors.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
并分别考察了掺杂量、加热时间和功率对合成产品晶型的影响。
The effects of the doping amount, the microwave heating time and power on the products were also investigated.
设计和研制了耗尽型选择性掺杂异质结晶体管。
Depletion Model Selective doped heterojunction transistor is designed and fabricated.
但是需要强调的是P -型掺杂的聚乙炔的比电导的衰变会由于掺杂的聚乙炔插在某些浓的水溶液中而得到有效的抑制。
But it should be stressed that the conductivity decay of P-type doped polyacetylene can be significantly suppressed by immersion of the doped polyacetylene film in some concentrated aqueous solutions.
掺杂导致原有的G型反铁磁序发生变化，形成了亚铁磁序的磁结构，材料的铁磁性有了很大提高；
The ferromagnetism can be significantly improved since the doping of Co changes the G antiferromagnetic order into the ferromagnetic one.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
为了获得高性能的微波吸收材料，釆用柠檬酸盐溶胶-凝胶法来制备掺杂有金属离子的纳米六角晶型铁氧体。
This study adopted the citrate Sol-gel method to prepare the nanophase hexagonal ferrite with doping metal to get high performance microwave materials.
因而P -型掺杂的聚乙炔在水溶液中是相当稳定的。
Therefore P-type doped polyacetylene is considerably stable in some concentrated aqueous solutions of electrolytes.
该方法包括用第一类型掺杂剂掺杂硅层并且执 行第一注入工艺以便在硅层中注入与第一类型相反的第二类型的掺 杂剂。
The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer.
就现行P型杂质扩散工艺的不足，进行了开旮铝镓掺杂技术的研究。
Taking account of the disadvantage of current P-type impurity diffusion technology, an open tube gallium-aluminium diffusion technology is investigated.
本文介绍用激光掺杂技术在高阻硅中掺入杂质来制造核辐射结型探测器的方法。
In this paper fabrication of nuclear radiation detectors by using laser-doping technique is reported.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
该方法也包括执行第二注入工艺以便在硅层中注入附加的第二类型掺杂剂。
The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer.
掺杂区位于鳍状结构的一顶部且接近鳍状结构的顶部的一表面，其中掺杂区具有一第一导电型。
The doped region is located in a top of the fin structure and near a surface of the top of the fin structure and the doped region has a first conductive type.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
该二电极是分别配置于反射层及第一型掺杂层上。
The two electrodes are set on the reflection layer and the first doped layer.
NMOS晶体管(A)的门电极(16)在n -型掺杂的不含锗的多晶硅层(14)上形成。
The gate electrodes (16) of the NMOS transistors (a) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
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