在沟道区的中央沟道部分上形成具有薄的栅氧化物膜的控制栅。
A control gate having a thin gate oxide film is formed over a center channel portion of the channel region.
本文通过计算机编程控制栅指电压，使液晶相控阵形成类似二元光栅的相位分布，实现对入射光的偏转。
Here deflecting a beam is accomplished by forming phase distribution that similar to binary grating phase's through modulating applied voltages.
针对手工焊条电弧焊(MMA)弧焊过程特点，建立了绝缘栅型晶体管逆变式弧焊电源控制系统。
Based on the characteristics of MMA welding process, a new control system of IGBT inverter arc welding power source is developed.
本文提出空穴注入控制型横向绝缘栅双极晶体管(CILIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
报道了一种新结构的功率栅控晶闸管，称其为槽栅MOS控制的晶闸管(TMCT)。
A new structure of power MOS-gated thyristor named Trench MOS Controlled thyristor (TMCT) is presented.
过流保护电路将检测电流转化为栅压控制开关管；
Over-current protection circuits convert the detecting current into the gate voltage which controls the switch FET.
器件的发光强度有所提高，但栅压对载流子的控制作用不理想。
Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.
该线电压极性检测电路检测线电压的 极性且控制该驱动电路以导通或截止该栅控晶体管。
The line voltage polarity detection circuit detects the polarity of line voltage and controls the drive circuit to conduct or cut off the gate-controlled transistor.
在该T型栅工艺中栅长和栅帽的尺寸分别进行控制，实现了较好的工艺可控性和较高的工艺成品率。
The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing, and good process controllability and high yield can be achieved.
最后介绍单片机控制的容栅测角仪。
Then, an angular instrument with capacitive grating controlled under single-chip microcomputer was introduced.
本文将分析一种用于对这种JFET背栅电平进行动态稳定控制的电路。
This paper is going to analyze a control circuit to stabilize dynamically the electrical level in JFET back grid.
通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
并应用美国NACA低速叶栅试验结果确定流入角和落后角，设计中控制扩散因子和气流折转角。
The inlet flow angle and diviation angle were confirmed which was applied to low cascade experiment result of American NACA, and controlled diffuser factor and flow deflection angle in design.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
提出了采用相位扫描方法加工变栅距（VLS）光栅的基本原理，给出了VLS光栅刻划机的控制系统，并通过刻划实验对这一新方法进行了验证。
The control system of the VLS gratings ruling engine is given also and a ruling experiment of the VLS gratings is made to examine the novel method.
文章最后总结出一种控制叶栅外形变化的简单有效的方法，并给出了计算结果。
Finally, a simple and effective method for controlling the change of the shape of blades was developed and the computative resu...
棒束栅元单一控制体划分，会使得计算得到的燃料峰值温度等表征严重事故来临时间晚于试验值；
A simplified control volume nodalization of bun-dle, may lead to late coming of predicted peak fuel temperature compared to that of measured;
神经mos晶体管是一种具有多输入栅加权信号控制和阈值可调控的高功能度的新型器件。
The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation.
本文研究了一种将窄缝与栅片配合应用于限流断路器的新型混合式灭弧系统。控制了栅片间金属短弧的金属蒸气喷流，同时削弱灭弧室中热气体的回流。
In this paper, we present a new type of hybrid arc quenching system, which controls the metal vapor and back flow of the hot air in splitters arc quenching chamber.
根据四辊轧机的工作原理和特点，提出了借助气动元件控制测量力、并利用磁栅传感器进行精密测量的实现方案。
This paper according to working principle and characteristics of four-rolling mill, maintain several method to measure the thickness of coiled sheet which is moving.
采用该控制系统的光栅刻划实践表明，所设计的光电式刻划控制系统已完全达到了高密度衍射光栅的亚微米栅距分度要求。
The ruling practice using the control system shows that the photoelectric control system meets the sub-micrometer graduation requirement of high-density gratings.
电路设计采用电流镜、折叠式共源共栅等结构，实现了在峰值电流控制模式中的电流比较功能。
By using the structures such as current mirror, folded-cascode and so on, the function of comparison in peak-value-current-mode-control is realized.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
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