本文叙述了CMOS集成电路的辐射损伤机理，并给出抗辐射加固集成电路的设计方法。
This paper describes the mechanism of radiation for CMOS IC, and gives out the method of design for radiation hardened IC.
对两者的关键技术和优缺点进行了比较，并针对国内外集成电路抗辐射加固筛选技术的现状给出了一些建议。
The key technology, advantages and shortcomings of the two methods are described in contrast, and some advices are given with the state-of-the-art of the screening technology.
对两者的关键技术和优缺点进行了比较，并针对国内外集成电路抗辐射加固筛选技术的现状给出了一些建议。
The key technology, advantages and shortcomings of the two methods are described in contrast, and some advices are given with the state-of-the-art of the screening technology.
应用推荐