水分和氧气的渗透是影响器件光电性能的重要因素。
The permeance of water vapor and oxygen were important index whichinfluence the optical and electrical characteristics of the device.
射频功率LDMOS的寄生电容直接影响器件的输出特性。
The output characteristics of the RF power LDMOS are greatly affected by the parasitic capacitance.
该文就镍钛器械折断的发生率及其影响器械折断的因素作一综述。
This paper reviews the prevalence of nickel-titanium instrument fracture and the factors influencing the fractures.
在多层互连基板中，基板材料的介电常数直接影响器件信号的传输速度。
In multilayer interconnected substrate dielectric constant of the substrate materials immediately affects transfer velocity of signal in the device.
药理学家进行试验 ，以确定如何药物和其他物质的影响器官和组织。
Pharmacologists conduct experiments to determine how drugs and other substances affect organ and tissues.
IGBT模块封装多层结构的热不匹配将产生热应力从而影响器件可靠性。
Thermal mismatch in IGBT packaging, because of its multiplayer structure, will result in thermal stress, which affects the long term reliability of devices.
大功率激光二极管阵列的正向特性失效问题严重影响器件的成品率和可靠性。
The forward characteristics failure of the high power laser diode array severely influences the yield and reliability of devices.
压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。
It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。
With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
随着MOS器件尺寸逐渐减小，由热载流子效应导致的损伤变得越来越严重，已成为影响器件性能的主要失效机制之一。
With the decrease of the MOS devices size, hot carrier effect failure get more and more heavy, it become one of the main failure mechanisms.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
针对集成传感器芯片封装粘贴过程中的残余应力影响器件性能的问题，使用有限元方法对环氧粘胶粘贴集成传感器芯片产生的封装残余应力进行了分析。
To investigate the sensor packaging effect, the finite element method is adopted for analyzing the distribution of residual stress in the multi-sensor chip with FR4 substrates.
违反规定，在城镇使用音响器材，音量过大，影响周围居民的工作或者休息，不听制止的。
Operating acoustic equipment in cities and towns at too high a volume in violation of the relevant regulations, disturbing the neighbouring residents work or rest, and refusing to stop such ACTS.
违反规定，在城镇使用音响器材，音量过大，影响周围居民的工作或者休息，不听制止的。
Operating acoustic equipment in cities and towns at too high a volume in violation of the relevant regulations, disturbing the neighbouring residents work or rest, and refusing to stop such ACTS.
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