根据BNRT不同工作状态下的内部电势、电子浓度和空穴浓度分布，解释了其S型负阻特性的产生机理。
According to the distribution of potential, electron and hole in the BNRT at different stages, the mechanism inducing S-type negative resistance characteristics is explained.
依据导电沟道内的电势分布，分析了栅极长度变化对OSIT工作特性的影响。
Depending on the potential distribution in the conductive channel, the influence of changing gate length on the OSIT s operation characteristic is analyzed.
依据导电沟道内的电势分布，分析沟道宽度变化对OSIT工作特性的影响。
Depending on the potential distribution in the conductive channel, the influence of changing channel width on the operation characteristic of OSIT is analyzed.
电势分布沿信号电荷密度流方向衰减且电荷载流子倍增寄存器工作频率越高，电势衰减越快。
It is attenuated along the direction of charge density. The higher the CCM frequency is, the sooner the potential attenuation is.
电势分布沿信号电荷密度流方向衰减且电荷载流子倍增寄存器工作频率越高，电势衰减越快。
It is attenuated along the direction of charge density. The higher the CCM frequency is, the sooner the potential attenuation is.
应用推荐