本发明可以用于电学测量铜引线在CMP过 程后铜引线层间介质是否产生侵蚀现象。
The invention can be used in electricity for measuring whether the interlayer media of the copper leading wires are eroded after the CMP process of the copper leading wires.
应力梯度随通孔直径、层间介质材料介电常数和铜线余量长度的减小而下降，随线宽减小而上升。
Stress gradient decreased as the via diameter, the dielectric constant of ILD or the residual length decreasing, and increased as the line width increasing.
应力极大值随通孔直径和层间介质材料介电常数的减小而下降，随线宽和铜线余量长度的减小而上升。
Residual stress decreased as the via diameter or the dielectric constant of ILD decreasing, and increased as the line width or the residual length decreasing.
为此采用拟双重介质模型模拟该类油藏：好储层对应裂缝系统，差储层对应基岩系统，但双重介质间窜流量考虑了储层之间的有效接触面积。
Therefore dual medium model was used for the reservoir simulation, where good reservoir was corresponded to fracture system and poor reservoir was to matrix system.
本文比对分析了极间介质为两层膜和三层膜的模型电容器元件的介电强度、局部放电性能以及耐久性能的试验结果。
Test result of dielectric strength, partial discharge and endurance property are analyzed and contrasted between solid dielectric is two film and tree film in model capacitor elements.
以不活泼的氮气充入绝缘介质层构成细密均匀的微孔结构，各微孔间互不连通，类似一个个密封仓。
As the inactive nitrogen in insulated dielectric layer, it will form an even and compact micro-hole structure with no linkage between each micro-hole which like the sealed room.
因此，波长转换元件110可产生穿过层122间接地发射到空气(或其它所期望的介质)内的光。
Thus, the wavelength converting element 110 May produce light that is indirectly emitted into air (or other desired medium) through the layer 122.
层间电介质、自组装单分子层、在该单分子层上的催化颗粒、以及在具有催化颗粒的单分子层上的铜层。
The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles.
由本方法形成的层间电介质膜具有低介电常数并显示出优良的机械特性。
The interlayer dielectric film formed by the method has a low dielectric constant and shows superior mechanical properties.
此处公开了一种使用多面体分子倍半硅氧烷形成半导体器件所用的层间电介质膜的方法。
Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane.
此处公开了一种使用多面体分子倍半硅氧烷形成半导体器件所用的层间电介质膜的方法。
Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane.
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