目前共发射极接法用途最多，应用最广。
The common emitter configuration is by far the most versatile and widely used.
目前共发射极接法用途最多，应用最广。
The common emitter configuration is by far the most versatile and widely used .
这种结构还可以构成横向光晶体管，共发射极电流增益为2 ~4倍。
Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to '4.
截止频率是影响共发射极、共基极和共集电极电路频率特性的重要因素。
Cut off frequency is the main factor influencing frequency properties of electrode circuits of common emitter, common base and common collector.
图2 - 1 (a)给出了共发射极取向的晶体管的物理特性，同时也给出了硅器件的电压极性和大小。
Figure 2-1 (a) shows the physical representation of the BJT in its common-emitter orientation, and also shows typical voltage polarities and magnitudes for the case of a silicon device.
图2 - 1 (a)给出了共发射极取向的晶体管的物理特性，同时也给出了硅器件的电压极性和大小。
Figure 2-1 (a) shows the physical representation of the BJT in its common-emitter orientation, and also shows typical voltage polarities and magnitudes for the case of a silicon device.
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