二极管d2用作栅极保护二极管。
因此，电压经过ESD保护二极管D1A和D1B接近0V，二极管漏电流均不影响传感器输出信号。
Thus, the voltage across ESD-protection diode D1A or D1B approaches 0V, and neither diode's leakage current affects the sensor's output signal.
由于两个二极管反向并联，所以此电路能够对任何极性的信号进行保护。
With two diodes in parallel back to back, the circuit will provide protection regardless of the signal polarity.
为明确起见，图中省略了过压二极管和保护电路。
For clarity, the figure omits overvoltage diodes and protection circuits.
图2 - 24示出静电计或皮安计的过载保护电路，其中包括一个电阻器和两个二极管(1n3595)。
Figure 2-24 shows a protection circuit for an electrometer ammeter or picoammeter, consisting of a resistor and two diodes (1n3595).
有两台电视在这个电路板二极管为5V和12v的保护。
There are two TVS diodes on this PCB for 5v and 12v protection.
另一种保护装置称为瞬态电压抑制二极管或TVS二极管。
Another protection device called Transient Voltage Suppression diode or TVS diode.
作为一项预防措施，如果有非常大的瞬态电压，适当的齐纳二极管d3和D4保护D2可能是有必要的。
As a precaution, it may be necessary to fit zener diodes D3 and D4 to protect D2 if extremely large transient voltages are likely.
继电器IC 3断开，保护放大器和钳位二极管。
Relay IC3 opens, protecting the amplifier and clamping diodes.
实践表明，压敏电阻作直流电源的整流器的保护元件优于二极管。
Practice shows that pressure sensitive resistance as a protective element of rectifier for D. C. supply is preferable to diode.
通过理论和实验证明了外保护环短路的光电二极管不仅不能减小暗电流，相反会增加暗电流。
It is shown theoretically and experimentally that a photodiode with external guard ring short circuit can not decrease dark current-it will be increased instead.
其箝位二极管电流检测(da引脚)甚至在高开关频率的输入电压瞬态时也能保护电路。
Its catch diode current sense (DA pin) protects the circuit during input voltage transients even at high switching frequencies.
以及由所述阱区、所述保护环区和所述衬底拾取区形成的保护性二极管。
The protective diode is formed including the well region, the guard ring region, and the substrate pickup region.
本文对继电保护装置中应用的二极管环形相敏电路进行了探讨。
In this paper, ring type diode phase-sensing circuits for protective relaying are discussed.
上述二极管串结构可应用于射频电路或使用正向的二极管串的电路的普通模拟电路和静电保护电路中。
The diode string structure can be used in a radio frequency circuit or a common analog circuit of the circuit using forward diode string and an electrostatic protection circuit.
上述二极管串结构可应用于射频电路或使用正向的二极管串的电路的普通模拟电路和静电保护电路中。
The diode string structure can be used in a radio frequency circuit or a common analog circuit of the circuit using forward diode string and an electrostatic protection circuit.
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