由位错等引起的各向异性的电子散射过程在引起电子—电子散射电阻率的样品依赖性方面起了重要作用。
An important role by anisotropic electron scattering presses such as those caused by dislocation etc in turn leads the sample dependence of the electron-electron scattering resistivity.
本文对空间和地面生长的BSO晶体进行了X射线摇摆曲线、位错腐蚀和透过率的测试。
The space-grown and terrestrially-grown BSO crystals were measured by X-ray rocking curves and dislocation etchings as well as transmission spectra.
这种观察位错的方法其分辨率比光学显微镜观察结果约高一个数量级。
The resolution of this method for dislocation observation is about an order of magnitude better than that of optical microscopic observation.
孪晶界阻碍位错运动导致高的加工硬化率；
The twin boundaries act as strong obstacles to the dislocation motion, so lead to higher strain-hardening.
孪晶界阻碍位错运动导致高的加工硬化率；
The twin boundaries act as strong obstacles to the dislocation motion, so lead to higher strain-hardening.
应用推荐