• 可以在超导体(一种能导电的材料)和绝缘体(一种导电的材料)之间转变。

    It can change between a superconductor a material that conducts electricity, and an insulator a material that doesn't conduct electricity

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  • 导体温度下发挥作用,几乎可以认为它们没什么用,因为那些用于将它们降到极低温度所消耗的能量抵消产生能量损失优势

    Superconductors only work at extremely low temperatures, rendering them practically useless because the energy used to cool them to those temps cancels out the benefit of no energy loss.

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  • 导演情愿降低导体导电率

    The conductor is reluctant to reduce the conductivity of the semiconductor.

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  • 导演情愿降低导体导电率率

    The conductor is reluctant to reduce the conductivity of the semiconductor.

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  • 利用红外辐射原理设计成导体基片上激光温度接触测量系统

    With IR temperature-measuring principle, a non-contact measuring system for measuring laser spot temperature on semiconductor substrate is designed.

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  • 指出磁场中做变速切割磁力线线)运动导体闭合电流存在讨论了其运动加速度

    The existence of electric current in the conductor(not closed)which is cut-ting the magnetic lines of force(B-lines) variably in the magnetic field is pointed out, and the acceleration is discussed.

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  • 2004年世界导体再创新高电子产业基础核心——半导体产业证明其言

    In 2004, the global semiconductor industry will hit a new high, which is validated by the basis and kernel of electronic industry.

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  • 内部机制方面健全主要是从行政监督机构设置人员配备观念意识制、监督方式、监督程序、监督内容、监督保障、监督力量整合等九个方面来论述的。

    The latter includes the institution setting, the personnel, the conception, the guidance, the manner, the procedure, the content, the guarantee, and the conformity of supervision on administration.

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  • 另外由于柱状熔化导体线路板组装线路板之间距离焊料而变窄

    Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.

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  • 室温下,成品电缆内外导体间施加工频1000V电压、保持1min直流1500V电压、保持1min击穿

    Greenhouse, finished conductor cables between the internal and externalprocessing Shi-voltage 1000 V, 1 min or maintain DC 1500V voltage, 1 min should not keep the breakdown.

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  • 本发明公开了一种形成导体结构方法这种导体结构包括具有与下面的衬底极性连续的非平面副集电极

    Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate.

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  • 连续集电极连续部分之间距离调节导体结构性能特性

    The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure.

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  • 连续集电极连续部分之间距离调节导体结构性能特性

    The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure.

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