所以说这是与硼硅玻璃，具有相当高的电阻率比一般的钠钙玻璃。
So it was with borosilicate glass, which had a considerably higher specific resistance than typical soda-lime glass.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
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