The new structure and its analytical model for the thin film SOI high voltage device with step drift region are proposed.
提出薄硅层阶梯漂移区SOI高压器件并建立其耐压解析模型。
参考来源 - 基于介质电场增强理论的SOI横向高压器件与耐压模型·2,447,543篇论文数据，部分数据来源于NoteExpress
通过对高压器件的防击穿保护，并增加适当的延时电路，大幅度提高了驱动电路的工作稳定性。
The circuit 's working stability is improved greatly through anti-breakdown protection and adding appropriate time-delay circuit.
为了获得SOI - LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧soi - LDMOS高压器件新结构。
In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
另外，本论文还研究了工艺改进对的高压器件的其他电性性能的影响，最后本论文还重新评估了工艺改进后该高压pmos器件的可靠性。
And more, this thesis describe the process improvement's impact to HV PMOS 'others electrical parameters, at last we re-evaluated the device reliability after the process improvement.
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