PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
模拟分析表明 ，采用该结构 ，器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ，器件的大电流特性和频率特性也有所改进 。
The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel .
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