更大的问题是氧离子布植的速度天生就慢，因而成本高昂。
The greater problem is that oxygen implantation is inherently slow, which makes it costly.
第一种是在在矽（111）基板上成长氧化矽，并将镧系元素-铽，以离子布植的方式植入样品。
One of them is to implant terbium ion into silicon oxides thin film which is grown on Si(111) substrates.
集成电路内有主动元件区，配置复数个主动元件。P-N接合区以离子布植不同型态的掺质而完成。
The active element zone is IC is matched with several active elements and the P-N joint zone is finished by ionic layout different type of dopants.
应用推荐