耐环境连接器 environment resistant connector 难熔金属硅化物 refractory metal silicide 难熔金属栅MOS集成电路 refractory metal gate MOS integrated circuit ..
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目前主要的改善方法是向铝包镍中添加元素，例如：添加金属钼、镍硼粉和难熔金属硅化物等。
The main measurement to improve its properties is to add something to the nickel-aluminum system, such as metallic molybdenum, nickel-boron and refractory metal silicates.
特别是，当难熔金属硅化物薄膜是硅化物薄膜的钨，铜的浓度最好，它在0.1至1.0范围为野生。%。
In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
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