提出了适用于任意逻辑值的可控阈电流型CMOS全加器的通用设计方法。
A universal design method for current-mode CMOS m-valued adders based on threshold-controllable technique is proposed.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
结果：在皮质酮的作用下，海马神经元膜的钾离子电流幅度明显下调，激活阈电位升高。
Results: it showed that the amplitudes of the potassium currents in hippocampal neurons decreased. However, the threshold potential of potassium currents increased. Conclusion: it is speculated...
应用推荐