介绍了新型微电子器件自旋晶体管和自旋阀晶体管的工作原理。

The principle of the new microelectronic devices, spin transistor and spin valve transistor is reviewed.

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在不影响电磁阀工作特性的情况下，将电磁阀驱动电压的高压部分由110伏降低到了36伏，并大量减少了电路元器件。

It can reduce the driving voltage from 110 volts to 36 volts and reduce the number of components in the circuit without reducing the circuit performance.

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优化材料性能参数和自旋阀巨磁电阻磁头的结构参数是微磁器件实用化的关键。

Optimizing the materials properties and structure parameters of giant magneto resistance (GMR) spin valve head is of key importance to application.

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