正是基于这些要求的激发使得存储设备由硅纳米线和铁电聚合物集合而成。

The use of silicon nanowires along with this ferroelectric polymer has been motivated by these requirements.

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得出液晶盒内取向层附近的铁电液晶的扭曲排列以及由于聚合物网络的体锚定作用而引起的盒内液晶分子的均匀书架式排列是“V”字型电光特性产生的关键。

And we confirmed that the key point to produce the "V" shape E-0 characteristics is the combination of bookshelf layer structure and the molecular twist orientation near the aligning surface.

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