采用单晶X射线衍射表征了晶体结构。
The crystal structures of the two complexes were determined via X-ray diffraction.
本文叙述了采用单晶硅压阻效应制作真空变送器的机理和关键工艺．给出了测量结果和结论，讨论了该元件应用范围等问题。
The mechanism and the key process of vacuum silicon pressure sensor are presented in this paper. And give the measuring results and conclusion, discuss the applications of the element.
这主要得益于它采用了单晶硅膜的SOI结构。
These benefit from the SOI Monocrystal silicon structure it possesses.
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