传统垂直式dmosfet高导通电阻的缺点在LDMOSFET中依旧存在，而垂直式igbt关闭延迟和闩锁的现象，也在LIGBT中发生。
Problems with high on-resistance that are seen in traditional vertical structure DMOSFET still appear in LDMOSFET and phenomena of turn-off delay and latch-up are seen in LIGBT as well.
方法：用真空负压表、延迟控制线路，接通电话机免提键、存储拨号键。
Methods The vacuum negative pressure meter and the delayed control line were used.
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