唯一的挑战是，如何提取自旋来形成一个自旋极化的电流，然后注入到电路中并保持极化在沿途不发生退化。
The challenge, however, is extracting the spins to form a spin-polarized current and injecting them into a circuit without the polarization degrading along the way.
为了研究动力学系统和混沌中产生的跳跃随机性，利用能量平衡原理分析了二阶非线性电路的退化方程。
Chaos related discontinuity jumps in nonlinear dynamic systems were analyzed using a second order nonlinear circuit model and degenerative equations based on the energy balance principle.
本文在分析MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的CMOS数字电路结构。
Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
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