... 辐射角分布 radiation angular distribution 辐射退火 radiation annealing 背景辐射 radiation background ...
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而且，发现在样品中的深辐射能级的荧光效率也受到快速热退火的影响。
Furthermore, we found that the luminescence efficiency of the deep radiative levels in the samples were also affected by rapid thermal annealing.
在热退火后，约60%的注入引起的辐射损伤可以得到恢复。
After thermal annealing about 60% of radiation damage induced by implantation can be restored.
讨论了用辐射-退火法和多元回归分析法对集成电路进行筛选的基本原理和步骤。
The principle and operational procedure of Integrated Circuits (ICs) screening with irradiation-and-anneal and multicomponent regression analysis are discussed.
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