最后利用电荷积累效应解释了负阻区本征双稳态特性。
Finally the intrinsic bistability in negative region was explained by the electric accumulation effect.
本文探讨具有两个负阻区的微分负阻器件的电路合成法实现问题。
The negative differential resistance devices with two negative resistance regions (twin-peak NDR devices) can be built by circuit synthesis approach.
应用推荐