用谐振探针在余辉式等离子体中进行测量，观察到了谐振效应。
A measurement with a resonance probe in the afterglow plasma was carried out and the resonance phenomenon was observed.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
利用一种新的电路模型系统研究了约瑟夫森结与谐振器的耦合效应。
Taking advantage of a new circuit model, we studied the coupling effect of resonator-coupled Josephson junction.
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