高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
新型包层折射率调制光栅可以由包层掺杂的光敏光纤经过侧面紫外曝光制成。
Through exposing the cladding photosensitive fiber to periodic ultraviolet, the new cladding index modulated fiber grating can be formed.
摘要 ： 采用直接光强调制的方法，建立了一种新型有机电致发光器件（OLED）的光电信号传输体系，研究了发光层掺杂、发光面积和预置电压对OLED响应速度的影响。
Abstract : A new type of optical signal transmission system based on organic light-emitting devices (OLED) has been investigated using direct light intensity modulation method.
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