该半导体结构包括半导体基板和所述半导体基板中的沟槽。
The semiconductor structure includes a semiconductor substrate, a trench in the semiconductor substrate.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
并且本发明还提供了一种包括栅极结构的半导体器件，该栅极结构的栅极顶部宽度大于栅极底部宽度。
Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.
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