软击穿时间由衬底电流随时间的弛豫特性和器件输出特性测量时监测的衬底电流突变确定。
The time to soft breakdown (t BD ) is obtained by the relaxation characteristics of the I sub with time and by monitoring the breaks of the I sub when measuring the output characteristics.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
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