湿式蚀刻系统 wet etching system
光激励蚀刻系统 photo excited etching system
浸渍式蚀刻系统 immersion wet etching system
离子束蚀刻系统 ion beam etching system ; IBE
螺旋波蚀刻系统 helicon etching system
反应性溅镀蚀刻系统 reactive sputter etching system
喷涂式蚀刻系统 spray etching system
溢流杯蚀刻系统 overflow cup etching system
螺旋型蚀刻系统 helical etching system
异种三胶粘剂粘结强度可比提供总额蚀刻系统。
Xeno III Adhesive provides bond strength comparable to total etch systems.
因为这意味着蚀刻系统必须能以纳米刻度，以超高精度在芯片上刻下极深、极窄的沟槽。
That means the etching systems have to be capable of creating extremely deep and narrow trenches in silicon, at the nanometer scale, with immense precision.
左图是一套Applied Tetra III高级掩膜蚀刻系统，如果掩膜板制造商要开发和生产45纳米的掩膜，就必须得使用这套设备。
On the left is an Applied Tetra III advanced reticle-etch system. This system is used by virtually every maskmaker in the world for the development and production of 45-nanometer masks.
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