阐述了二氧化硅干法蚀刻的原理和主要的蚀刻参数。
The principle and the main parameters of the dry etching for silicon dioxide are introduced.
以精细线路的线宽和蚀刻系数作为评价标准，找出最佳参数，并分析了蚀刻压力对精细线路的影响机理。
We use the width of the fine lines and etching coefficient as estimation standards to find the perfect parameters as well as analyze the theory of etching pressure influence in producing fine lines.
文中介绍了黄铜电化学蚀刻的原理、电解液配方和工艺参数。
The principle, electrolyte formula and parameter of brass electrochemistry etching are introduced.
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