与标准的巨磁电阻(GMR)多层膜相比 ,基于交换偏置的自旋阀 (spin valves)可以在很低的饱和磁场下观察到GMR[3 ] ,这使得人们对交换偏置这种现象进行了大量的研究[4— 6]
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A ’spin valve’ effect is proposed for explaining the giant anisotropy of the out-of-plane MR and the evolution of the scaling parameters with the external field.
自旋阀效应被用来解释面外磁阻巨大的各向异性和标度参数随磁场的变化。
参考来源 - NaWe surveyed magnetoresistance value under different stress, and found that by adjusting the thickness of Cu layer, we can increase sensitivity of Fe40Co60/Cu/Ni spin valve resistance to stress.
测量了不同应力下的磁电阻值,发现通过调节Cu层的厚度可以提高Fe40Co60/Cu/Ni自旋阀磁电阻对应力的灵敏度。
参考来源 - Cu层厚度和制备条件对FeThis paper studies the angular sensing properties of a typical spin-valve GMR chip with the help of some basic theories in magnetic electronics and experiment.
本文结合磁电子学的基本理论和实验研究了一种自旋阀GMR芯片的角度传感特性。
参考来源 - 自旋阀巨磁阻（GMR）芯片角度传感特性的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
最后对自旋阀的底钉扎和顶钉扎结构进行了比较。
Spin valve with bottom structure is compared with which with top structure.
介绍了新型微电子器件自旋晶体管和自旋阀晶体管的工作原理。
The principle of the new microelectronic devices, spin transistor and spin valve transistor is reviewed.
优化材料性能参数和自旋阀巨磁电阻磁头的结构参数是微磁器件实用化的关键。
Optimizing the materials properties and structure parameters of giant magneto resistance (GMR) spin valve head is of key importance to application.
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