同时，采用相同工艺同批制作了无磁膜微电感作为对比样品，并取各项结构参数与磁膜电感相一致。
Inductors without the magnetic thin-film are fabricated as the referential sample using the same processes, in which the structure parameters are consistent with the inductor with magnetic thin-film.
介绍了一种用于高品质射频集成电感的厚膜多孔硅背向生长技术。
A backside growth technique of thick porous silicon layers for the on-chip RF integrated inductor is presented.
在初始阶段，形成的点蚀芯连续被修复的钝化膜，这会导致在电感元件中的电化学阻抗谱。
At the initial stage, the pitting cores are formed and the passive film is repaired continuously, which results in the inductive component in the electrochemical impendence spectrum.
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