能带弯曲是指当半导体表面存在垂直的外加电场时，半导体中各处静电势就不同，则能带就相应地发生弯曲，称为能带弯曲。
According to the distribution of the electric field, the band bending of conductive band of n-type silicon was calculated. Combined the band bending of silicon with the electron energy distribution of metals, the electron energy distribution of silicon was obtained.
根据硅微尖的电场分布,计算了硅的能带弯曲,并结合金属的场发射电子能谱基础,得到了硅的场发射电子能谱。
参考来源 - 硅微尖的场发射电子能谱·2,447,543篇论文数据，部分数据来源于NoteExpress
我们发现了时间调控的表面能带弯曲，这导致了表面上二维电子气的形成。
It reveals obvious time-dependent band bending near the surface, which induces the creation of 2DEG.
有约束力的二氧化硅在分子水平上P25的过程被称为能带弯曲，，巴伦实验室的研究生呼玛Jafry发现了它。
The process of binding silica to P25 at the molecular level is called band bending, and Huma Jafry, a graduate student in Barron’s lab, discovered it.
能带弯曲是一种有效杀死病毒的方法，因为这种技术使得电子由紫外线中解脱出来，向前来游荡与水反应产生羟基自由基。
Band bending is an effective way to kill viruses because the technique allows electrons, which were freed by the UV, to travel forward and create hydroxyl radicals by reacting with water.
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