能带工程【energy band engineering】 创造人工改性半导体材料的工程。由江崎和朱兆祥提出。创造人工改性半导体材料是通过对材料的物理参数和几何参数的设计和生长,来改变其能带结构和带隙图形,以优化其电学性质和光学性质,采用人工改性半导体材料可以优化电子器件和光电子器件的特性。
基于能带工程 ( band engineering) 的设计思路已 经获得大量新型可见光响应的光催化剂 , 随着能带 结构调控机制的逐渐明确 , 必能有指导地研制更高
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Si_(1-x)Ge_x alloys are important semiconductor materials for the microelectronics industry, due to the possibility of band-gap engineering leading to high-speed electronic devices and the compatibility with conventional silicon technology.
Si_(1-x)Ge_x合金是一种新型半导体材料,它与传统的Si工艺相兼容,又能实现“能带工程”,是现在和未来的微电子产业中重要半导体材料。
参考来源 - 硅和硅锗合金半导体中碳相关缺陷和自间隙缺陷的从头计算研究·2,447,543篇论文数据,部分数据来源于NoteExpress
本文主要论述了能带工程在半导体激光器中的应用。
The applications of energy band engineering to semiconductor lasers is mainly described in the paper.
近年来这些成果被应用于半导体器件和电路的研制,形成一门新的能带工程。
The accomplishments have been applied to developing of semiconductor devices and circuits in recent years, and new energy band engineering has formed.
这种差异表明,在器件的材料结构设计上已从掺杂设计步入到了能带工程设计。
It is shown that doping design for the device's material structure has evolved into band engineering design.
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