耗散功率就是某一时刻电网元件或全网有功输入总功率与有功输出总功率的差值。 耗散功率，也称集电极最大允许耗散功率PCM，是指晶体管参数变化不超过规定允许值时的最大集电极耗散功率。耗散功率与晶体管的最高允许结温和集电极最大电流有密切关系。硅管的结温允许值大约为150°C，锗管的结温允许值为85°C左右。要保证管子结温不超过允许值,就必须将产生的热散发出去。
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晶体管在耗散功率时，结温分布一般不均匀。
When a transistor dissipates power on work, its junction temperature distribution is commonly non-uniform.
如果负载被连接到电流源，则电流流经负载并耗散功率。
If a load is connected to the current source, current flows through the load and power is dissipated.
根据阻尼器的加载过程分析，提出了阻尼器耗散功率概念。
Based on the analysis of damper movement during load test period, a concept for the dissipation power of damper is suggested.
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