指定用图形方法程序输出的线条宽度。
对曝光电子的能量和线条宽度之间的关系进行了分析。
The relation between the electron exposure energy and the line width is analyzed.
对薄层电阻、接触、光掩模对准、线条宽度、器件参数与掺杂的相关性等内容进行了初步试验和分析。
The initial experiments on and analysis of sheet resistance, contact, photomask alignment, line width, and correlations between device parameters and dopants have been made.
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