对激光直写光刻的曝光量分布和线宽控制进行了相关理论分析和实验。
The exposure dose distribution and line width control for the laser direct writing system are analyzed. Some experiments are also carried out.
对于形状，这些选项包括了透明度，改进的梯度，以及线宽方面的更多控制。
For shapes, these include transparency, improved gradients, and more control over line widths.
集成电路特征线宽的不断减小对直拉（CZ）单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
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