设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
在这里碳纳米管或者单有机分子替代了传统的半导体晶体管。 我们发现新的晶体管能用做一个磁性存储器。
We work with a completely new transistor concept, in which a carbon nanotube or a single organic molecule takes the place of the traditional semi-conductor transistor.
近场光学存储器采用了纳米高新制作技术，具有极高的读出速度和极高的存储密度。
The near-field optical memory manufactured with high techique, and nanometer technique has very high memory density and high read-out rate.
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