·2,447,543篇论文数据，部分数据来源于NoteExpress
等离子增强化学气相沉积(PECVD)是低温沉积硅膜的主要方法。
Plasma enhanced chemical vapor deposition (PECVD) is one of the matured and simple manipulated among the thin film deposition methods at low temperature.
为了满足制备较厚低摩擦系数类金刚石薄膜（DLC）耐磨镀层的实际需求，对在等离子增强化学气相沉积的类金刚石薄膜（W-DLC）中掺钨进行了系统研究。
To meet the requirement for the diamond-like carbon thin films with low friction factor, the tungsten-doped diamond-like carbon(W-DLC)thin films prepared through PECVD were studied in depth.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
应用推荐